umf5n transistors rev.a 1/4 power management (d ual transistors) umf5n 2sa2018 and dtc144ee are housed independently in a umt package. z application power management circuit z features 1) power switching circuit in a single package. 2) mounting cost and area can be cut in half. z structure silicon epitaxial planar transistor z equivalent circuits r 1 r 2 dtr2 tr1 (1) (2) (3) (4) (5) (6) r1=47k ? r2=47k ? z packaging specifications z dimensions (units : mm) each lead has same dimensions umt6 type umf5n umt6 f5 tr 3000 package marking code basic ordering unit (pieces) sot-363 downloaded from: http:///
umf5n transistors rev.a 2/4 z absolute maximum ratings (ta=25 c) tr1 parameter ? 1 single pulse p w =1ms ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 15 12 6 500 150(total) 150 55~ + 150 1.0 ? 1 ? 2 unit vv v ma a mw c c collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature dtr2 parameter ? 1 characteristics of built-in transistor. ? 2 120mw per element must not be exceeded. each terminal mounted on a recommended land. symbol v cc v in i c i o p c tj tstg limits 50 10 to + 40 100 30 150(total) 150 55 to + 150 ? 1 ? 2 unit vv mama mw c c supply voltageinput voltage collector current output current power dissipation junction temperature range of storage temperature z electrical characteristics (ta=25 c) tr1 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0ma, f = 1mhz transition frequency f t 260 mhz v ce = 2v, i e = 10ma, f = 100mhz bv ceo 12 v i c = 1ma collector-emitter breakdown voltage bv cbo 15 v i c = 10 a collector-base breakdown voltage bv ebo 6 v i e = 10 a emitter-base breakdown voltage i cbo 100 na v cb = 15v collector cut-off current i ebo 100 na v eb = 6v emitter cut-off current v ce(sat) 100 250 mv i c = 200ma, i b = 10ma collector-emitter saturation voltage h fe 270 680 v ce = 2v, i c = 10ma dc current gain cob 6.5 pf collector output capacitance dtr2 parameter symbol min. typ. max. unit conditions ? transition frequency f t 250 mhz v ce = 10v, i e = 5ma, f = 100mhz ? characteristics of built-in transistor. v i(off) 0.5 v v cc = 5v, i o = 100 a input voltage v i(on) 3.0 v v o = 0.3v, i o = 2ma v o(on) 100 300 mv v o = 10ma, i i = 0.5ma output voltage i i 180 av i = 5v input current i o(off) 500 na v cc = 50v, v i = 0v output current r 1 32.9 47 61.1 k ? input resistance g i 68 v o = 5v, i o = 5ma dc current gain r 2 /r 1 0.8 1.0 1.2 resistance ratio downloaded from: http:///
umf5n transistors rev.a 3/4 z electrical characteristic curves tr1 0 1 100 1000 10 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 1.4 1.0 1.2 0.4 0.6 0.8 0.2 v ce =2v pulsed ta=125 c ta=25 c ta= 40 c 1 10 100 1000 collector current : i c (ma) fig.2 dc current gain vs. collector current 1 dc current gain : h fe 10 1000 100 ta = 125 c ta = 40 c ta = 25 c v ce = 2v pulsed 1 10 100 1000 collector current : i c (ma) fig.3 collector-emitter saturation voltage vs. collector current ( ) 1 collector saturation voltage : v ce(sat) (mv) 10 1000 100 ta=25 c pulsed i c /i b = 50 i c /i b = 20 i c /i b = 10 1 10 100 1000 collector current : i c (ma) fig.4 collector-emitter saturation voltage vs. collector current ( ? ) 1 collector saturation voltage : v ce (sat) (mv) 10 1000 100 ta = 25 c ta = 40 c ta = 125 c i c /i b = 20 pulsed 1 10 100 1000 collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 100 10000 1000 ta = 25 c ta = 40 c ta = 125 c i c /i b = 20 pulsed 1 10 100 1000 emitter current : i e (ma) fig.6 gain bandwidth product vs. emitter current 1 transition frequency : f t (mhz) 10 1000 100 v ce = 2v ta = 25 c pulsed 1 10 100 0.1 1 10 100 1000 ta = 25 c f = 1mhz i e = 0a collector output capacitance : cob (pf) emitter input capacitance : cib (pf) emitter to base voltage : v eb ( v) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob 0.01 0.1 1 10 100 emitter current : v ce (v) fig.8 safe operation area 0.001 transition frequency : i c (a) 0.01 10 0.1 1 ta = 25 c single pulsed dc 100ms 10ms 1ms downloaded from: http:///
umf5n transistors rev.a 4/4 dtr2 v o = 0.3v 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 5020 10 52 1 500m200m 100m input voltage : v i(on) (v) output current : i o (a) fig.9 input voltage vs. output current (on characteristics) 25 c 100 c ta = 40 c v cc = 5v 0.5 1.0 1.5 2.0 2.5 3.0 0 10m 5m2m 1m 500 200 100 50 20 10 5 1 2 input voltage : v i(off) (v) output current : io (a) fig.10 output current vs. input voltage (off characteristics) ta = 100 c 25 c 40 c output current : i o (a) dc current gain : g i v o = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500200 100 5020 10 52 1 fig.11 dc current gain vs. output current ta = 100 c 25 c 40 c 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m200m 100m 50m20m 10m 5m2m 1m l o /l i = 20 output current : i o (a) output voltage : v o(on) (v) fig.12 output voltage vs. output current ta = 100 c 25 c 40 c downloaded from: http:///
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix downloaded from: http:///
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